Xiang'an Industrial Park Xiamen Torch High-tech Zone
Xiang'an Industrial Park Xiamen Torch High-tech Zone
| Parameter Name | EIA-481 Tolerance (mm) | LZ633 Custom Value (mm) | Industrial Practical Advantages |
|---|---|---|---|
| W Tape Width | 8±0.10 | 8 | Universal narrow width fits all global mini-component automated taping equipment, zero equipment modification cost |
| T Base Thickness | 0.20±0.02 | 0.20 | Ultra-thin flexible conductive substrate avoids hard curling after thousands of winding layers, ideal for small mini chip reels |
| A0 Cavity Width | 1.80±0.05 | 1.80 | Precision narrow pocket restricts lateral movement of tiny 3A-AG/33 semiconductor chips |
| B0 Cavity Length | 3.40±0.05 | 3.40 | Matched longitudinal outline of miniature components, prevents front-back sliding and overturning |
| K0 Cavity Depth | 1.55±0.05 | 1.55 | Moderate pocket depth matches chip thickness, ensures stable suction nozzle contact to lower empty pick rate |
Ultra-Tight Precision Compact Cavity: Minimal internal clearance firmly locks tiny 3A-AG/33 chips, effectively preventing component shifting and delicate pin bending.
Integral Conductive Black PC Material: Permanent 10⁶~10⁹Ω/sq ESD resistance with no surface coating shedding, full-cycle static protection for sensitive miniature semiconductors.
0.20mm Flexible Thin Substrate: Lightweight flexible substrate reduces overall reel weight to cut logistics cost for bulk shipments, no permanent winding curl.
1.00° Optimized Demolding Angle: Balanced draft angle improves continuous thermoforming productivity and reduces pocket surface blemishes.
One-Stop Supporting Packaging Accessories: Matching anti-static cover tape and small plastic reels supplied together, rapid custom mold adjustment for special variant small chip sizes.
3A-AG/33 packaged small signal diodes, miniature switching semiconductors for consumer electronics, smart wearables, and miniature control modules
Semiconductor packaging factories with high-precision mini-chip SMT mass production lines
Electronic manufacturers requiring long-term stable static protection for tiny discrete semiconductors
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